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Dow Corning Spins E-Beam Resist

Dow Corning Corp. is selling an e-beam resist that supports 6 nm features, with good line edge roughness. Although the sensitivity of the resist is not good enough to support high-volume manufacturing, the company intends to further improve it to support higher throughputs.

David Lammers, News Editor -- Semiconductor International, 6/24/2008 9:53:00 AM

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Dow Corning Corp. (Midland, Mich.) has begun commercial sales of an electron-beam (e-beam) resist with a resolution capability of 6 nm lines/spaces (L/S). The resist also has good line edge roughness (LER) properties with an edge definition of 3.3 nm, the company said.

Dow Corning worked with Philips researchers on e-beam lithography development.
Dow Corning worked with Philips researchers on e-beam lithography development.
While the XR-1541 e-beam resist is fast enough to support chip development projects, further improvements in sensitivity are needed to support high-volume manufacturing, said Jeff Bremmer, global marketing manager with the company's lithography solutions group. He declined to specify the sensitivity level.

“Throughput is holding e-beam back. To some extent, improvements are needed to the equipment so that it patterns fast enough. Another part is to create an e-beam resist that reacts fast enough to the e-beam. Improvements are needed on both the equipment and material sides to get the throughput up,” Bremmer said.

The XR-1541 resist could also play a role in the formation of 1:1 templates, created with e-beam tools and used in nanoimprint lithography.

Since 1994, Dow Corning has sold its flowable oxide material, which is widely used in the DRAM industry as an interlevel dielectric (ILD). The spin-on dielectric has good etch resistivity, and lithographers began using it as an e-beam resist. Dow Corning chemists took the hydrogen silsesquioxane-based resin and improved on its resist capabilities.

Dow Corning’s headquarters in Auburn, Mich., two hours north of Detroit.
Dow Corning’s manufacturing site in Auburn, Mich., two hours north of Detroit.

Bremmer said Dow Corning will work to develop second- and third-generation resists. “We are looking at a need to continually develop this material to get to the target of high-volume manufacturing, which could be quite a large market in five or 10 years. But this is a starting point for the researchers to work with to develop the technology,” he said.

Bremmer said while extreme ultraviolet (EUV) lithography has its own advantages, maskless e-beam offers much lower capital costs. E-beam resist could blossom into a major market for Dow Corning.

Dow Corning has used its expertise in silicon-based resins, which Bremmer said provide better etch resistance than organic materials, to work with partners who specialize in lithography materials, including resists and anti-reflective coatings.

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