Webcast: Metrology for Advanced Interconnects

Originally broadcast October 18, 2007

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The introduction of new materials such as ultralow-k films, less forgiving processes, and new structures demand new metrology techniques for interconnect and gate etch. Although mature techniques like OCD and scatterometry, as well as CD-SEM, continue successfully to provide the necessary metrology, some applications will require specific types of metrology, which is expected to lead to an overall requirement for additional, possibly revolutionary, metrology capabilities. Since no one technology will be capable of meeting all the requirements for some of these advanced applications, a possible solution is a mix of metrology technologies. Meanwhile, integrated metrology will continue delivering the necessary sensors and evolving toward configurations that are more robust.

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Moderator:

Alexander Braun Senior Editor Semiconductor International

Panelists:

Alain C. Diebold College of Nanoscale Science and Engineering University at Albany

Zsolt Tökei   Principal Scientist Copper/Low-k Program IMEC

Jim Price Semiconductor Metrology and Materials Characterization Sematech

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