Praxair Electronics Technology Forum
Tuesday, October 14, 2008
Ambassador Hotel Hsinchu
Technology Forum: 09:00 - 12:00
Poster Reception: 12:00 - 14:00
The industry's quest for innovative solutions for continued device scaling is a key challenge. Collaboration is a fundamental element to realize future achievements. The forum's topics will include discussions about materials and process technologies in both gases and deposition materials.
TECHNOLOGY FORUM AGENDA
09:00 - 10:00
Keynotes
Semiconductor Technology Innovations and Challenges in the 21st Century
Continued Challenges and Opportunities in Electronic Materials
10:00 - 12:00
Learn and exchange ideas with industry experts in key process materials areas at either of the following concurrent sessions:
Gas and Gas Distribution Session
Advances in Safety, Design and Installation of Bulk Specialty Gas Supply (BSGS) Systems for Ammonia and Silane
Bulk ammonia and silane are critical delivery systems that offer large gas throughput, consistent quality, and reduced downtime for customers. This seminar covers the essence of these details and provides highlights of Praxair's BSGS systems and technology for meeting such requirements.
Advances in Gas Sources for Implantation Productivity
Implantation and advanced doping are increasingly key process technologies for meeting roadmap node requirements. Fab benefits and operational aspects of Praxair's patented
UpTime® technology will be reviewed as well as emerging doping chemistry and processes for next-generation devices.
Thin Film Metals and Performance Materials Session
Ruthenium Atomic Layer Deposition
This seminar will discuss high-k precursor materials based on hafnium and zirconium, barrier and contact materials based on tantalum, ruthenium, tungsten, cobalt, and metal electrode materials based on ruthenium and tantalum.
Engineered High Purity/High Density Tungsten Sputtering Targets and Their Resultant Thin-Film Properties
Tungsten sputtering targets for advanced interconnect applications require that the tungsten target not only have a density of 100% (theoretical) and a 5N purity, but also desirable microstructural and physical properties for reliable-through-target-life performance. These physical and microstructural target attributes will be described and correlated to their thin-film performance.
Advanced Gate Oxides for High-k dielectrics, Self-forming Barrier Metals and Nickel Based Alloys for Salicides
Various examples of new material development and challenges for leading edge semiconductor processing integration will be described. Materials that will be described include LaHFO for high-k dielectric gate oxides, ruthenium-tantalum and copper-manganese for self-forming barriers and various nickel alloys for engineered salicides.
12:00 - 14:00
Poster Reception
For an informative poster presentation and open discussion, please join us at a luncheon reception immediately following the technology sessions.
Poster topics:
- Metal-Organic Precursor Delivery System for Enhanced Productivity
- Improved Ruthenium Nucleation Density:Praxair Pyrrolyl Compounds
- Bulk Specialty Gas Supply Systems
- DuraPad™ CMP Polishing Pad
- Development in Electrostatic Chucks
- AHM Grade Acetylene for Advanced Patterning Lithography
- 6N Cu Alloy for Critical Thin-Film Applications
- Advances in Sputtering Target Technology for 300mm Wafer Applications
- Source Materials and Delivery Systems for Ion Implant and Implanter Cleaning
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Thank you for registering for the Praxair Electronics Technology Forum! We will contact you to confirm registration. We are very excited about this collaboration of technology experts and hope to see you there.
Sincerely,
Lisa A. Fanti
Director, electronics R&D
Semiconductor Technology Innovations and Challenges in the 21st Century
Dr. Xiaomeng Chen is a senior technical staff member and project manager of the CMOS Process Development organization at IBM's Semiconductor Research and Development Center (SRDC). Chen currently manages the process development groups of insulator, metallization, CMP, plating, wets, RTA, epitaxy, substrate and diffusion for various technology node developments for both SOI and bulk. Since joining IBM's SRDC in 1998, Chen has been the technical leader or manager of many projects and technologies:
• BEOL integrator for 180nm, 130nm, 90nm FEOL integrator
• FEOL integration manager of 90nm, 45nm and then 32nm
In 2005, she received the
Outstanding Technical Achievement Award at IBM. In 2007, she received the
Technology All-Stars Award at the National Women of Color Technology Conference. Chen participates in the sub-committee of the Institute of Electrical and Electronics Engineers, and is a member of Sigma Xi Scientific Research Honor Society and Society of Woman Engineer.
Chen holds a doctoral degree in Chemistry from the State University of New York, Albany. Chen has over 20 publications and over 20 patents.
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Continued Challenges and Opportunities in Electronic Materials
Dr. Lisa Fanti recently joined Praxair in 2008 as director of research and development for Praxair Electronics, responsible for developing and commercializing competitive materials and technology solutions aimed to better serve the semiconductor, flat panel, and solar markets. Prior to working at Praxair, Fanti spent 19 years at IBM in East Fishkill, NY, where she held various technical and managerial positions in research, development, manufacturing and business.Fanti worked on the development and implementation of unit processes for electronic packaging and semiconductor applications, including electrolytic copper deposition and C4 bumping processes. In 2001, she joined the management team responsible for the bring-up of the East Fishkill 300mm wafer facility. In 2005, she transitioned to a position focused on executing technology alliances for microelectronics.
Fanti holds doctoral and master of science degrees in Chemical Engineering from the University of Pennsylvania, and a bachelor of science degree from Rensselaer Polytechnic Institute. Fanti holds several patents in electronics unit processing.
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HokTsan Lam is Praxair Electronics' Asia product manager, with an overall responsibility for marketing, sales and technical support for process gases. His technical expertise in bulk gas delivery systems is derived from his experience as an applications engineering and technical expert for customers in Asia. Prior to moving to Shanghai, Dr. Lam was an R&D associate at the Praxair Technology Center in New York. This center leads Praxair worldwide research and engineering endeavors, directing the delivery of industrial gases to its customers and manages air separation plants across the United States and Canada.
Lam holds a Ph.D. in Chemical Engineering from the University of Pennsylvania and is a respected speaker at various industry associations and symposiums.
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Dragon Lu is the regional technical manager for Praxair Electronics, Asia. Lu is responsible for developing gas applications with the goal to improve customer productivity. Lu has been heavily involved in assisting fabs to adopt Praxair Electronics' UpTime® subatmospheric dopant gas products. In particular, he has made efforts to create new solutions with OEMs to help improve implanter component lifetimes.
Lu holds a bachelor of science degree in Electrical Engineering from Feng Chia University, Taiwan and a Master of Business Administration from Chiao-Tung University, Taiwan.
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Paul Gilman is responsible for new product development and intellectual property for Praxair's Deposition Materials group. Prior to his appointment as director, Dr. Gilman was the manager of R&D, where he established the rapid prototype lab for the fabrication and testing of experimental sputtering targets and enhanced the capabilities of Praxair's PVD applications laboratory. Previously, Gilman held various engineering management positions at Allied Signal, High Performance Alloy Products and the International Nickel Co. Gilman received a bachelor of science degree in metallurgy and materials science from the University of Pennsylvania, a master of science degree and doctoral degree in materials science and engineering from Stanford University.
Gilman has been granted 56 U.S. patents, participated in several materials science associations and is an invited speaker at technical conferences, universities and industry events.
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©2008 Praxair Technology, Inc. All rights reserved.