China Unveils First Homegrown MOCVD Equipment

Yao Gang, Editor-in-Chief, SI China -- Semiconductor International, 6/3/2008 6:56:00 AM

Jiesheng Electric Co. Ltd. (Qingdao, China) has developed metal organic chemical vapor deposition (MOCVD) equipment, based on proprietary technology developed within the semiconductor lighting project of China’s National 863 Program. The company said its equipment is aimed at epitaxial growth of gallium nitride (GaN) layers required for deep-ultraviolet (DUV) light-emitting diodes (LEDs). The national research project resulted in the ability to grow six extension slices simultaneously.

MOCVD equipment is key to the creation of high-brightness LEDs, laser diodes, UV photodetectors, high-efficiency solar cells and high-frequency, high-power electronic devices. At present, China’s semiconductor lighting industry relies on imported MOCVD equipment for both development and production, company officials said.

Earlier, Jiesheng Electric developed GaN epitaxial equipment that grows 2 in. single slices and 2 in. triple slices at the same time, with patents granted in China. The equipment grows GaN materials featuring different structures with sapphire slices and silicon carbide (SiC) substrates.

Set up in 2001, Jiesheng Electric is the only GaN MOCVD equipment manufacturer in China.

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